| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：648.72 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：583.99 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. 文件：440.63 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：605.09 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：650.17 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：403.73 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：401.97 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package & TO-220F full-pak for through hole. 文件：422.16 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired. 文件：641.99 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. Lead free product is acquired. 文件：652.77 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS |
技術(shù)參數(shù)
- BVDSS(V)：
650
- Rds(on)mΩ@10V：
10500
- ID(A)：
1.3
- Qg(nC)@10V(typ)：
6.9
- RθJC(℃/W)：
4.5
- Pd(W)：
27
- Configuration：
Single
- Polarity：
N
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TOP/3A |
7000 |
絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購! |
詢價(jià) | ||
CET |
25+ |
DIP-14 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
PH |
23+ |
SOP-28 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
TAITIE |
25+ |
N/A |
636 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
CET |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
CET |
17+ |
TO-220F |
6200 |
詢價(jià) | |||
TAITIEN |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
CET |
24+ |
5000 |
詢價(jià) | ||||
CET |
24+ |
TO-220F |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
PHI |
25+ |
SOP28W |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價(jià) |
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