P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：407.16 Kbytes 頁數(shù)：4 Pages

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -33A, RDS(ON) = 18mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 30mW @VGS = -4.5V. Lead free product is acquired.

文件：621.77 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

P Channel MOSFET

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -9.3A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：108.01 Kbytes 頁數(shù)：4 Pages

CET

華瑞

P-Channel MOSFET uses advanced trench technology

文件：1.03789 Mbytes 頁數(shù)：6 Pages

DOINGTER

杜因特

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? Load Switch ? Battery Switch

文件：1.00487 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體