| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CED01N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15 ? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:85.28 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:400.59 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:398.58 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. 文件:472.38 Kbytes 頁數(shù):4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. 文件:412.24 Kbytes 頁數(shù):5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:414.42 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET | ||
N Channel MOSFET | CET 華瑞 | CET | ||
N Channel MOSFET | CET 華瑞 | CET | ||
N Channel MOSFET | CET 華瑞 | CET |
技術(shù)參數(shù)
- BVDSS(V):
650
- Rds(on)mΩ@10V:
10500
- ID(A):
1.2
- Qg(nC)@10V(typ):
5.8
- RθJC(℃/W):
3.5
- Pd(W):
35.7
- Configuration:
Single
- Polarity:
N
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CET |
2010 |
TO251 |
50000 |
只做全新原裝誠信經(jīng)營現(xiàn)貨長期供應(yīng) |
詢價 | ||
CET |
23+ |
TO251 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
CET |
24+ |
TO251 |
673 |
詢價 | |||
FUJITSU/富士通 |
23+ |
TO-220F |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
CET/華瑞 |
23+ |
TO-251 |
106599 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
CET/華瑞 |
TO-251 |
6030 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
芯力微 |
23+ |
TO251 |
9800 |
正品原裝貨價格低 |
詢價 | ||
CET |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
CET/華瑞 |
23+24 |
TO-251 |
16790 |
專業(yè)經(jīng)營各種場效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC |
詢價 | ||
SR |
23+ |
IPAK |
5000 |
原裝正品,假一罰十 |
詢價 |
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