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          首頁 >CEB60N10>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEB60N10

          N-Channel Enhancement Mode Field Effect Transistor

          URES ■ 100V, 60A, RDS(ON) = 23.5m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:97.78 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB60N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 57A, RDS(ON) = 24mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

          文件:519.679 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CEB60N10

          N Channel MOSFET

          CET

          華瑞

          CEP60N10

          N-Channel Enhancement Mode Field Effect Transistor

          URES ■ 100V, 60A, RDS(ON) = 23.5m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:97.78 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEP60N10

          60A,100V Heatsink Planar N-Channel Power MOSFET

          General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C

          文件:1.22981 Mbytes 頁數(shù):5 Pages

          THINKISEMI

          思祁半導體

          CEP60N10

          N-Channel MOSFET uses advanced trench technology

          文件:1.17058 Mbytes 頁數(shù):3 Pages

          DOINGTER

          杜因特

          技術(shù)參數(shù)

          • BVDSS(V):

            100

          • Rds(on)mΩ@10V:

            24

          • ID(A):

            57

          • Qg(nC)@10V(typ):

            64

          • RθJC(℃/W):

            0.75

          • Pd(W):

            200

          • Configuration:

            Single

          • Polarity:

            N

          供應商型號品牌批號封裝庫存備注價格
          CET
          24+
          5000
          詢價
          CET
          25+
          TO-263
          90000
          進口原裝現(xiàn)貨假一罰十價格合理
          詢價
          VBSEMI/臺灣微碧
          23+
          T0-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          CET/華瑞
          2022+
          TO-263
          50000
          原廠代理 終端免費提供樣品
          詢價
          VBsemi
          21+
          TO263
          10026
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          CET
          23+
          TO-263
          7300
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          VBsemi
          23+
          TO263
          10065
          原裝正品,有掛有貨,假一賠十
          詢價
          VB
          25+
          T0-263
          1020
          原裝正品,假一罰十!
          詢價
          VIATELEC
          24+
          BGA
          17860
          公司現(xiàn)貨庫存,支持實單
          詢價
          CET/華瑞
          24+
          TO-263
          60000
          全新原裝現(xiàn)貨
          詢價
          更多CEB60N10供應商 更新時間2026-1-18 16:30:00
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