N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V, 152A, RDS(ON) = 3.6mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：532.69 Kbytes 頁(yè)數(shù)：5 Pages

CET-MOS

華瑞

N Channel MOSFET

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V, 152A, RDS(ON) = 3.6mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：532.69 Kbytes 頁(yè)數(shù)：5 Pages

CET-MOS

華瑞

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=160A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：363.19 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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