| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CEB07N65 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：416.48 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | |
CEB07N65 | N Channel MOSFET | CET 華瑞 | CET | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. 文件：822.56 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：518.57 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：544.5 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N Channel MOSFET | CET 華瑞 | CET | ||
N Channel MOSFET | CET 華瑞 | CET |
技術(shù)參數(shù)
- BVDSS(V)：
650
- Rds(on)mΩ@10V：
1300
- ID(A)：
7
- Qg(nC)@10V(typ)：
29
- RθJC(℃/W)：
0.75
- Pd(W)：
166
- Configuration：
Single
- Polarity：
N
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
CET/華瑞 |
23+ |
TO-263 |
123203 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
CET |
25+ |
TO-263 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
CET/華瑞 |
2511 |
TO-263 |
360000 |
電子元器件采購降本30%!原廠直采,砍掉中間差價 |
詢價 | ||
CET |
24+ |
50000 |
詢價 | ||||
CET |
25+ |
TO-263 |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價格合理 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
CET |
23+ |
TO-263 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
國產(chǎn) |
詢價 |
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