P-Channel Enhancement MOSFET

Application ? PWM applications ? Load switch ? Power management

文件：3.09289 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -12A, RDS(ON) = 132mΩ @VGS = -10V. RDS(ON) = 195mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：380.19 Kbytes 頁數(shù)：4 Pages

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.5A, RDS(ON) = 125m? @VGS = -10V. RDS(ON) = 169m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：251.78 Kbytes 頁數(shù)：4 Pages

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.5A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：392.58 Kbytes 頁數(shù)：4 Pages

CET

華瑞