N-Channel Enhancement Mode Field Effect Transistor

FEATURES ? 60V, 3.7A, RDS(ON) = 100 mΩ @VGS = 10V. RDS(ON) = 120 mΩ @VGS = 4.5V. ? High dense cell design for low RDS(ON) ? Rugged and reliable. ? SOT-89 Package

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N-Channel 6 0-V (D-S) MOSFET

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微碧半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n? 60V, 3.7A, RDS(ON) = 100 mΩ?@VGS = 10V.\n??????????????? RDS(ON) = 120 mΩ?@VGS = 4.5V.\n? High dense cell design for low RDS(ON)\n? Rugged and reliable.\n? SOT-89 Package ? 60V, 3.7A, RDS(ON) = 100 mΩ?@VGS = 10V.\n? High dense cell design for low RDS(ON)\n? SOT-89 Package;

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 8A, RDS(ON) = 150mΩ @VGS = 10V. RDS(ON) = 180mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-251 & TO-252 package.

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 4A, RDS(ON)=100mΩ @ VGS=10V. ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-223 Package.

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 3.7A, RDS(ON)=100mΩ @ VGS=10V. RDS(ON)=120mΩ @ VGS=4.5V. ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-223 Package.

文件：494.66 Kbytes 頁(yè)數(shù)：5 Pages

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