0.5W Zener Diode

Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades.

文件：322.88 Kbytes 頁(yè)數(shù)：3 Pages

SS

Package：模具；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 齊納 - 單 描述：VOLTAGE REGULATOR

MICROCHIP

微芯科技

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：417.95 Kbytes 頁(yè)數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 25A , RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：396.56 Kbytes 頁(yè)數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：417.95 Kbytes 頁(yè)數(shù)：4 Pages

CET

華瑞