DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 頁數(shù)：17 Pages

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德州儀器

Dual 4-Input NAND Gate

文件：30.05 Kbytes 頁數(shù)：5 Pages

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德州儀器

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes 頁數(shù)：13 Pages

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德州儀器

軍用 2 通道、4 輸入、4.5V 至 5.5V 與非門

The ?ACT20 devices contain two independent 4-input NAND gates. They perform the Boolean function Y = (A ? B ? C ? D)\\ or Y = A\\ + B\\ + C\\ + D\\ in positive logic. ? Inputs Are TTL-Voltage Compatible\n? Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption\n? Balanced Propagation Delays\n? ±24-mA Output Drive Current \n? Fanout to 15 F Devices\n \n? SCR-Latchup-Resistant CMOS Process and Circuit Design\n? Exceeds 2-kV ESD Protection Per M;

TI

德州儀器

絲印：5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/5962-0051301qca/marking.html">5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 頁數(shù)：17 Pages

TI

德州儀器

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes 頁數(shù)：13 Pages

TI

德州儀器

Dual 4-Input NAND Gate

文件：30.05 Kbytes 頁數(shù)：5 Pages

TI

德州儀器