絲?。?a target="_blank" title="Marking" href="/cd40107be/marking.html">CD40107BE；Package：PDIP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

CMOS DUAL 2-INPUT NAND BUFFER/DRIVER

文件：165.45 Kbytes 頁數(shù)：10 Pages

TI

德州儀器

CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器