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    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    2N7002ESPT
    N-Channel Enhancement Mode Field Effect Transistor
    
VOLTAGE 60 Volts CURRENT 0.300 Ampere
CONSTRUCTION
* N-Channel Enhancement with ESD protection in input
MARKING
* PK1
FEATURE
* Small surface mounting type. (SOT-23)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
* Rugged and reliable.
* High saturation 
    文件：532.57 Kbytes 頁(yè)數(shù)：5 Pages
    CHENMKO
    力勤
    

    2N7002E-T1-E3
    N-Channel 60 V (D-S) MOSFET
    
FEATURES
? Halogen-free According to IEC 61249-2-21 Definition
? Low On-Resistance: 3 ?
? Low Threshold: 2 V (typ.)
? Low Input Capacitance: 25 pF
? Fast Switching Speed: 7.5 ns
? Low Input and Output Leakage
? Compliant to RoHS Directive 2002/95/EC
BENEFITS
? Low Offset Voltage
? Low-Vo
    文件：183.33 Kbytes 頁(yè)數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    2N7002ET1G
    Small Signal MOSFET 60 V, 310 mA, Single, N??hannel, SOT??3
    
Features
? Low RDS(on)
? Small Footprint Surface Mount Package
? Trench Technology
? S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements; AEC?Q101 Qualified and
   PPAP Capable
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoH
    文件：104.79 Kbytes 頁(yè)數(shù)：5 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    2N7002ET1G
    Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm
    
Features
? Low RDS(on)
? Small Footprint Surface Mount Package
? Trench Technology
? S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp
    文件：205.12 Kbytes 頁(yè)數(shù)：6 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    2N7002E-T1-GE3
    N-Channel 60 V (D-S) MOSFET
    
FEATURES
? Halogen-free According to IEC 61249-2-21 Definition
? Low On-Resistance: 3 ?
? Low Threshold: 2 V (typ.)
? Low Input Capacitance: 25 pF
? Fast Switching Speed: 7.5 ns
? Low Input and Output Leakage
? Compliant to RoHS Directive 2002/95/EC
BENEFITS
? Low Offset Voltage
? Low-Vo
    文件：194.4 Kbytes 頁(yè)數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    2N7002ET7G
    Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm
    
Features
? Low RDS(on)
? Small Footprint Surface Mount Package
? Trench Technology
? S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp
    文件：205.12 Kbytes 頁(yè)數(shù)：6 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    2N7002F
    絲?。?a target="_blank" title="Marking" href="/-7f/marking.html">-7F；Package：SOT-23；TrenchMOS Logic Level FET
    
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Features
■ Logic level threshold compatible 
■ Very fast switching
■ Surface-mounted package 
■ TrenchMOS technology
Applications
■ Logic level translator 
■ High-
    文件：126.94 Kbytes 頁(yè)數(shù)：11 Pages
    PHI
    PHI
    PHI
    

    2N7002-G
    N-Channel Enhancement-Mode Vertical DMOS FET
    
General Description
The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi
    文件：444.49 Kbytes 頁(yè)數(shù)：14 Pages
    MICROCHIP
    微芯科技
    

    2N7002-G
    MOSFET
    
MOSFET (N-Channel)
RoHS Device
Features
   Power dissipation : 0.35W
    文件：183.7 Kbytes 頁(yè)數(shù)：4 Pages
    COMCHIP
    典琦
    

    2N7002H
    絲?。?a target="_blank" title="Marking" href="/m9/marking.html">M9；Package：SOT23；60 V, N-channel Trench MOSFET
    
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted
Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits
? Logic-level compatible
? Very fast switching
? Trench MOSFET technology
? AEC-Q101 quali
    文件：283.29 Kbytes 頁(yè)數(shù)：15 Pages
    NEXPERIA
    安世
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Pb-free：
      Pb
    • Halide free：
      H
    • Status：
      Active
    • Channel Polarity：
      N-Channel
    • Configuration：
      Single
    • V(BR)DSS Min (V)：
      60
    • VGS Max (V)：
      ±20
    • VGS(th) Max (V)：
      2.5
    • ID Max (A)：
      0.115
    • PD Max (W)：
      0.2
    • RDS(on) Max @ VGS = 4.5 V(mΩ)：
      7500
    • RDS(on) Max @ VGS = 10 V(mΩ)：
      7500
    • Qg Typ @ VGS = 10 V (nC)：
      1
    • Ciss Typ (pF)：
      20
    • Package Type：
      SOT-23-3
    
            
    
        
    
            
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