場效應(yīng)晶體管

CBI

創(chuàng)基電子

包裝：散裝 類別：電纜，電線 - 管理 熱縮套，帽蓋 描述：HEATSHRINK BOOT BUS INSERT BLACK

TE Connectivity Aerospace, Defense and Marine

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 4.5A, RDS(ON) = 30m? @VGS = 4.5V. RDS(ON) = 40m? @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package.

文件：123.43 Kbytes 頁數(shù)：4 Pages

CET

華瑞

Dual N-Channel 25-V (D-S) MOSFET

FEATURES ? Halogen-free Option Available ? TrenchFET? Power MOSFETs

文件：939.86 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6A, RDS(ON) = 21m? (typ) @VGS = 4.5V. RDS(ON) = 30m? (typ) @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package.

文件：123.47 Kbytes 頁數(shù)：4 Pages

CET

華瑞