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                >CAB760M12HM3>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    CAB760M12HM3
    1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module
    
Technical Features
? Low Inductance, Low Profile 62mm Footprint
? High Junction Temperature (175 °C) Operation
? Implements Switching Optimized Third
Generation SiC MOSFET Technology
? Light Weight AlSiC Baseplate
? High Reliability Silicon Nitride Insulator

 VDS 1200 V
 IDS 760 A
Syste
    文件：1.9153 Mbytes 頁數(shù)：11 Pages
    WOLFSPEED
    

    CAB760M12HM3
    HM Power Module Family
    High Performance 62mm FootprintLow Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced LossesHigh Junction Temperature (175 °C) OperationConfigurations Available with both Second & Third Generation SiC MOSFETsLightweight AlSiC BaseplateSilicon Nitride Insulator f  ? High Performance 62mm Footprint\n? Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses\n? High Junction Temperature (175 °C) Operation\n? Configurations Available with both Second & Third Generation SiC MOSFETs\n? Lightweight AlSiC Baseplate\n? Silic;
    Wolfspeed(CREE)
    

    CAB760M12HM3R
    1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module
    
Technical Features
? Low Inductance, Low Profile 62mm Footprint
? High Junction Temperature (175 °C) Operation
? Implements Switching Optimized Third
Generation SiC MOSFET Technology
? Light Weight AlSiC Baseplate
? High Reliability Silicon Nitride Insulator

 VDS 1200 V
 IDS 760 A
Syste
    文件：1.90798 Mbytes 頁數(shù)：11 Pages
    WOLFSPEED
    

    CAB760M12HM3R
    HM Power Module Family
    High Performance 62mm FootprintLow Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced LossesHigh Junction Temperature (175 °C) OperationConfigurations Available with both Second & Third Generation SiC MOSFETsLightweight AlSiC BaseplateSilicon Nitride Insulator f  ? High Performance 62mm Footprint\n? Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses\n? High Junction Temperature (175 °C) Operation\n? Configurations Available with both Second & Third Generation SiC MOSFETs\n? Lightweight AlSiC Baseplate\n? Silic;
    Wolfspeed(CREE)
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Package：
      HM High Performance 62 mm
    • Configuration：
      Half-Bridge
    • Blocking Voltage：
      1200 V
    • Current Rating：
      765 A
    • RDS(ON) at 25°C：
      1.33 mΩ
    • Generation：
      Gen 3 MOS
    • Maximum junction temperature：
      175 °C
    • Module Size：
      110 mm x 65 mm x 12.2 mm
    • Recommended for New Design?：
      Yes
    
            
    
        
    
            
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            更新時(shí)間2026-1-22 14:39:00
        
    
        
    
          
    
            
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