650 V Discrete Silicon Carbide Schottky Diodes

650 V, 8 A, QFN package, Industrial qualified, Discrete SiC Schottky Diode ? Lowest forward voltage (Vf) drop over temperature in the industry\n? Robust MPS technology with high surge capability\n? Direct drop-in replacement for current silicon diodes and other silicon carbide diodes\n;

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6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：679.48 Kbytes 頁數(shù)：7 Pages

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Package：4-PowerVQFN；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：8A 650V SIC SCHOTTKY QFN

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6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.64579 Mbytes 頁數(shù)：9 Pages

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Silicon Carbide Schottky Diode

文件：728.37 Kbytes 頁數(shù)：6 Pages

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Silicon Carbide Schottky Diode Z-Rec? Rectifier

Features ? New 6th Generation Technology ? Low Forward Voltage Drop (VF ) ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? Low Leakage Current (Ir ) ? Temperature-Independent Switching Behavior ? Positive Temperature Coefficient on VF Benefits ? Higher System Level Effi

文件：642.17 Kbytes 頁數(shù)：6 Pages

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