Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：282.77 Kbytes 頁(yè)數(shù)：7 Pages

ALLEGRO

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：223.37 Kbytes 頁(yè)數(shù)：7 Pages

SANKEN

三墾

isc Silicon NPN Power Transistor

DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 ??????? = 200V(Min)-2SC6011A ? Good Linearity of hFE ? Complement to Type 2SA2151/A ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable ope

文件：254.3 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

Isolated, 60W Ultra-Wide 4:1Input DC/DC Converters

文件：320.59 Kbytes 頁(yè)數(shù)：2 Pages

MPD

Cascadable Amplifier 2000 to 6000 MHz

文件：374.86 Kbytes 頁(yè)數(shù)：2 Pages

MACOM

Cascadable Amplifier 2000 to 6000 MHz

Description The A6011 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF

文件：1.33694 Mbytes 頁(yè)數(shù)：2 Pages

MA-COM