| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>C3M；BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES ? Wideband response : fu = 2.8 GHz TYP. @ 3 dB bandwidth ? Low current : ICC = 24.5 mA TYP. ? Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz : PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz ? High linearity : PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz : PO (1dB) = +7.0 dBm TYP 文件：377.22 Kbytes 頁(yè)數(shù)：19 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?strong>C3M；BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES ? Wideband response : fu = 2.8 GHz TYP. @ 3 dB bandwidth ? Low current : ICC = 24.5 mA TYP. ? Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz : PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz ? High linearity : PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz : PO (1dB) = +7.0 dBm TYP 文件：377.22 Kbytes 頁(yè)數(shù)：19 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/c3m0015065d/marking.html">C3M0015065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd Generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Higher system efficiency ? Reduced cooling requiremen 文件：1.06874 Mbytes 頁(yè)數(shù)：12 Pages | WOLFSPEED | WOLFSPEED | ||
絲印：C3M0015065K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features ? C3MTM SiC MOSFET technology ? Optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? 文件：1.14336 Mbytes 頁(yè)數(shù)：12 Pages | WOLFSPEED | WOLFSPEED | ||
絲印：C3M0016120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Reduce switching losses and minimize gate ringing ? H 文件：932.98 Kbytes 頁(yè)數(shù)：11 Pages | WOLFSPEED | WOLFSPEED | ||
絲印：C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery 文件：1.06209 Mbytes 頁(yè)數(shù)：12 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0021120d/marking.html">C3M0021120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Reduce switching losses and minimize gate ringing ? H 文件：807.87 Kbytes 頁(yè)數(shù)：10 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0021120k/marking.html">C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery 文件：664.49 Kbytes 頁(yè)數(shù)：12 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0025065d/marking.html">C3M0025065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd Generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Higher system efficiency ? Reduced cooling requiremen 文件：1.01615 Mbytes 頁(yè)數(shù)：11 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0025065j1/marking.html">C3M0025065J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? R 文件：1.0347 Mbytes 頁(yè)數(shù)：11 Pages | WOLFSPEED | WOLFSPEED |
詳細(xì)參數(shù)
- 型號(hào)：
C3M
- 制造商：
CEL
- 制造商全稱(chēng)：
CEL
- 功能描述：
BIPOLAR ANALOG INTEGRATED CIRCUIT
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
0526+ |
SOT363 |
1840 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
NEC |
2023+ |
SOT363 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢(xún)價(jià) | ||
NEC |
23+ |
SOT363 |
1990 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
NEC |
22+ |
SOT363 |
20000 |
公司只做原裝 品質(zhì)保證 |
詢(xún)價(jià) | ||
NEC |
24+ |
SC70-6 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢(xún)價(jià) | ||
NEC |
23+ |
SOT23-6 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
NEC |
23+ |
SOT23-6 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
NEC |
23+ |
SC70-6 |
50000 |
原裝正品 支持實(shí)單 |
詢(xún)價(jià) | ||
NEC |
2450+ |
SOT23-6 |
8850 |
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!! |
詢(xún)價(jià) | ||
NEC |
24+ |
SOT23-6 |
8000 |
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增 |
詢(xún)價(jià) |
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相關(guān)庫(kù)存
更多- C3M0015065D
- C3M0015065K
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- C3M0900170D
- C3M0900170M
- UPC3226TB-E3-A
- UPD5713TK-E2
- UPC3232TB-E3
- UPC8240T6N-E2
- UPD5740T6N-E2
- UPC3239TB-E3
- NV24C08MUW3VTBG
- UPD5738T6N-E2-A
- UPC3241TB-E3-A
- BZT52H-C62
- FP6737S6P
- SN74AUP1G126DPWR
