3rd Generation 650 V, 16A Silicon Carbide Schottky

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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Silicon Carbide Schottky Diode

文件：850.9 Kbytes 頁數(shù)：6 Pages

CREE

科銳

碳化硅肖特基二極管

低電容，高頻開關(guān)，高溫環(huán)境工作\n更高電流下經(jīng)過優(yōu)化的開關(guān)行為\n具有低反向恢復(fù)電荷的整流穩(wěn)健快速體二極管\n出色的熱性能\n更高的雪崩耐量\n適應(yīng)多種標(biāo)準(zhǔn)驅(qū)動程序\n3/4/7 引腳封裝;

GDSICSEMI

廣大碳基

650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi ? Lowest forward voltage (Vf) drop over temperature in the industry\n? Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n? Robust MPS technology with high surge capability\n? High reverse-voltage blocking capability\n? Direct drop-in replacement for current silicon diodes and o;

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SiC肖特基二極管

ChipNobo

無邊界

Package：TO-220-2；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 650V 39A TO220-2

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