3rd Generation 650 V, 12 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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650 Volt Schottky Rectifier

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650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi ? Lowest forward voltage (Vf) drop over temperature in the industry\n? Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n? Robust MPS technology with high surge capability\n? High reverse-voltage blocking capability\n? Direct drop-in replacement for current silicon diodes and o;

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Package：TO-220-2；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 650V 35A TO220-2

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