Z-RecTM Rectifiers and Zero-Recovery? Rectifiers

Z-REC? RECTIFIERS and ZERO-RECOVERY? RECTIFIERS SILICON CARBIDE Z-FET? MOSFET

文件：291.41 Kbytes 頁數(shù)：2 Pages

CREE

科銳

Silicon Carbide Schottky Diode 600-Volt Schottky Rectifier

Z-REC? RECTIFIER Features ? 600-Volt Schottky Rectifier ? Optimized for PFC Boost Diode Application ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? High-Frequency Operation ? Temperature-Independent Switching Behavior ? Extremely Fast Switching ? Positive Tempera

文件：749.53 Kbytes 頁數(shù)：5 Pages

CREE

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3rd Generation 600 V, 3 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.58076 Mbytes 頁數(shù)：9 Pages

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Silicon Carbide Schottky Diode

文件：856.92 Kbytes 頁數(shù)：6 Pages

CREE

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碳化硅肖特基二極管

開關損耗降低，可實現(xiàn)高速開關。 低電容，高頻開關，高溫環(huán)境工作\n更高電流下經過優(yōu)化的開關行為\n具有低反向恢復電荷的整流穩(wěn)健快速體二極管\n出色的熱性能\n更高的雪崩耐量\n適應多種標準驅動程序\n3/4/7 引腳封裝;

GDSICSEMI

廣大碳基

600 V Discrete Silicon Carbide Schottky Diodes

Low forward voltage (Vf) drop over temperatureZero reverse-recovery charge for fast switching operationsRobust MPS technologyHigh reverse-voltage blocking capability ? Low forward voltage (Vf) drop over temperature\n? Zero reverse-recovery charge for fast switching operations\n? Robust MPS technology\n? High reverse-voltage blocking capability;

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SiC肖特基二極管

ChipNobo

無邊界

Package：TO-220-2；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 600V 3A TO220-2

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