絲印：C3BR；Package：SOT-23；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1 Features 1? Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ? ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) ? Available in Texas Instruments NanoStar? and NanoFree? Packages ? Supports 5-V

文件：632.18 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲?。?strong>C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2? Available in Texas Instruments NanoFree? Package ? Supports 5-V VCC Operation ? Inputs Accept Voltages to 5.5 V ? Max tpd of 5.3 ns at 3.3 V ? Low Power Consumption, 10-μA Max ICC ? ±24-mA Output Drive at 3.3 V ? Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲?。?strong>C3BR；Package：SOT-23；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1 Features 1? Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ? ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) ? Available in Texas Instruments NanoStar? and NanoFree? Packages ? Supports 5-V

文件：632.18 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲?。?strong>C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 頁數(shù)：20 Pages

TI

德州儀器

絲?。?strong>C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 頁數(shù)：20 Pages

TI

德州儀器

絲?。?strong>C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 頁數(shù)：20 Pages

TI

德州儀器