TYPE CMP / CL3P

6C 18 7/0.0152 BC FLEX OAS FLEX TYPE CMP / CL3P

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GENERAL

通用電纜

Silicon and InGaAs APD Preamplifier Modules

Description PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that prov

文件：1.24737 Mbytes 頁數(shù)：9 Pages

PERKINELMER

Silicon and InGaAs APD Preamplifier Modules

Description PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that prov

文件：1.24737 Mbytes 頁數(shù)：9 Pages

PERKINELMER

Silicon and InGaAs APD Preamplifier Modules

Description PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that prov

文件：1.24737 Mbytes 頁數(shù)：9 Pages

PERKINELMER

Silicon and InGaAs APD Preamplifier Modules

Description PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that prov

文件：1.24737 Mbytes 頁數(shù)：9 Pages

PERKINELMER

Silicon and InGaAs APD Preamplifier Modules

Description PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that prov

文件：1.24737 Mbytes 頁數(shù)：9 Pages

PERKINELMER

Silicon and InGaAs APD Preamplifier Modules

Description PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that prov

文件：1.24737 Mbytes 頁數(shù)：9 Pages

PERKINELMER

Silicon and InGaAs APD Preamplifier Modules

Description PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that prov

文件：1.24737 Mbytes 頁數(shù)：9 Pages

PERKINELMER

混合光學(xué)APD接收器模塊

C30659系列采用反相放大器設(shè)計，帶作為輸出緩沖級的射極跟隨器。\n\n這些模塊中Si APD與埃賽力達(dá)的C30817EH、 C30902EH、C30954EH和C30956EH產(chǎn)品中的相同，而InGaAs APD與C30645EH和C30662EH產(chǎn)品中的相同。這些檢測器在830和1550 nm之間具有極佳響應(yīng)度，而且在所有波長都具有極快的上升和下降時間。該模塊的前置放大器部分使用超低噪聲GaAs FET前端，設(shè)計用于在高于我們的標(biāo)準(zhǔn)C30950系列的跨阻下工作。 ? 系統(tǒng)帶寬：50 MHz\n\n? 超低等效噪聲功率（NEP）： ? 在900 nm處為55 fW/√Hz\n\n? 在1064 nm處為90 fW/√Hz\n\n\n\n? 光譜響應(yīng)范圍：400至1100nm，在1060 nm經(jīng)過優(yōu)化\n\n? 典型功耗：150 mW\n\n? ±5 V放大器工作電壓\n\n? 50 Ω交流負(fù)載能力（交流耦合）\n\n? 氣密TO-8封裝\n\n? 高可靠性;

Excelitas

埃賽力達(dá)

混合光學(xué)APD接收器模塊

C30659系列采用反相放大器設(shè)計，帶作為輸出緩沖級的射極跟隨器。\n\n這些模塊中Si APD與埃賽力達(dá)的C30817EH、 C30902EH、C30954EH和C30956EH產(chǎn)品中的相同，而InGaAs APD與C30645EH和C30662EH產(chǎn)品中的相同。這些檢測器在830和1550 nm之間具有極佳響應(yīng)度，而且在所有波長都具有極快的上升和下降時間。該模塊的前置放大器部分使用超低噪聲GaAs FET前端，設(shè)計用于在高于我們的標(biāo)準(zhǔn)C30950系列的跨阻下工作。 ? 系統(tǒng)帶寬：200 MHz\n\n? 超低等效噪聲功率（NEP） ? 在900 nm處為55 fW/√Hz\n\n? 在1064 nm處為100 fW/√Hz\n\n\n\n? 光譜響應(yīng)范圍：400至1100nm，在1060 nm經(jīng)過優(yōu)化\n\n? 典型功耗：150 mW\n\n? ±5 V放大器工作電壓\n\n? 50 Ω交流負(fù)載能力（交流耦合）\n\n? 氣密TO-8封裝\n\n? 高可靠性;

Excelitas

埃賽力達(dá)