SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 1.4Ω（MAX）@VGS=20V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：348.25 Kbytes 頁數：2 Pages

ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/c2m1000170/marking.html">C2M1000170；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features ? High Speed Switching with Low Capacitances ? High Blocking Voltage with Low RDS(on) ? Easy to Parallel and Simple to Drive ? Ultra-low Drain-gate capacitance ? Halogen Free, RoHS Compliant Benefits ? Higher System Efficiency ? Increased System Switching Frequency ? Reduced Cool

文件：918.65 Kbytes 頁數：11 Pages

WOLFSPEED

Silicon Carbide Power MOSFET Z-FETTM MOSFET

文件：620.11 Kbytes 頁數：7 Pages

CREE

科銳

Silicon Carbide Power MOSFET

文件：1.05392 Mbytes 頁數：10 Pages

CREE

科銳

碳化硅 MOSFET

低電容，高頻開關，高溫環(huán)境工作\n更高電流下經過優(yōu)化的開關行為\n具有低反向恢復電荷的整流穩(wěn)健快速體二極管\n出色的熱性能\n更高的雪崩耐量\n適應多種標準驅動程序\n3/4/7 引腳封裝;

GDSICSEMI

廣大碳基

1700 V Discrete Silicon Carbide MOSFETs

High blocking voltage with low RDS(on)High speed switching with low capacitancesFast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to driveLow parasitic inductanceWide creepage and clearance distance between drain and source ? High blocking voltage with low RDS(on)\n? High speed switching with low capacitances\n? Fast intrinsic diode with low reverse recovery (Qrr)\n? Easy to parallel and simple to drive\n? Low parasitic inductance\n? Wide creepage and clearance distance between drain and source;

Wolfspeed(CREE)

SiC MOS

ChipNobo

無邊界