N-Channel Enhancement Mode

Silicon Carbide Power MOSFET Z-FET? MOSFET N-Channel Enhancement Mode Features ? High Speed Switching with Low Capacitances ? High Blocking Voltage with Low RDS(on) ? Easy to Parallel and Simple to Drive ? Resistant to Latch-Up ? Halogen Free, RoHS Compliant Benefts ? Higher System

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CREE

科銳

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features ? High Blocking Voltage with Low On-Resistance ? High Speed Switching with Low Capacitances ? Easy to Parallel and Simple to Drive ? Avalanche Ruggedness ? Resistant to Latch-Up ? Halogen Free, RoHS Compliant Benefits ? Higher System Efficiency ? Reduced Cooling Requirements ? I

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WOLFSPEED

Silicon Carbide Power MOSFET

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CREE

科銳

碳化硅 MOSFET

低電容，高頻開關，高溫環(huán)境工作\n更高電流下經過優(yōu)化的開關行為\n具有低反向恢復電荷的整流穩(wěn)健快速體二極管\n出色的熱性能\n更高的雪崩耐量\n適應多種標準驅動程序\n3/4/7 引腳封裝;

GDSICSEMI

廣大碳基

1200 V Discrete Silicon Carbide MOSFETs

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements? ? Stable RDS(ON) over temperature\n? Available in package options with separate Kelvin source pin\n? Extremely fast switching\n? Reduction of heat-sink requirements;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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