絲印：C2M0045170D；Package：TO-247-3L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features ? 2nd generation SiC MOSFET technology ? High blocking voltage with low On-Resistance ? High speed switching with low capacitances ? Resistant to latch-up ? Halogen Free, RoHS Compliant Benefits ? Higher system efficiency ? Reduced cooling requirements ? Increased power density

文件：977.83 Kbytes 頁(yè)數(shù)：13 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low On-Resistance ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：417.06 Kbytes 頁(yè)數(shù)：4 Pages

ISC

無(wú)錫固電

Silicon Carbide Power MOSFET C2MTM MOSFET Technology

文件：1.19749 Mbytes 頁(yè)數(shù)：10 Pages

CREE

科銳

碳化硅 MOSFET

低電容，高頻開(kāi)關(guān)，高溫環(huán)境工作\n更高電流下經(jīng)過(guò)優(yōu)化的開(kāi)關(guān)行為\n具有低反向恢復(fù)電荷的整流穩(wěn)健快速體二極管\n出色的熱性能\n更高的雪崩耐量\n適應(yīng)多種標(biāo)準(zhǔn)驅(qū)動(dòng)程序\n3/4/7 引腳封裝;

GDSICSEMI

廣大碳基

1700 V Discrete Silicon Carbide MOSFETs

High blocking voltage with low RDS(on)High speed switching with low capacitancesFast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to driveLow parasitic inductanceWide creepage and clearance distance between drain and source ? High blocking voltage with low RDS(on)\n? High speed switching with low capacitances\n? Fast intrinsic diode with low reverse recovery (Qrr)\n? Easy to parallel and simple to drive\n? Low parasitic inductance\n? Wide creepage and clearance distance between drain and source;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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