N- and P-Channel Enhancement-Mode Dual MOSFET

General Description\nThe Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. ? Low threshold\n? Low on resistance\n? Low input capacitance\n? Fast switching speeds\n? Freedom from secondary breakdown\n? Low input and output leakage\n? Independent, electrically isolated N- and P channelsApplications\n? Medical ultrasound transmitters\n? High voltage pulsers\n? Amplifi ers\n? ;

Microchip

微芯科技

NPN Epitaxial Planar Silicon Transistor

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MITSUBISHI

三菱電機(jī)

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5.2A, RDS(ON) = 29mΩ (typ) @VGS = 10V. RDS(ON) = 45mΩ (typ) @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

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CET

華瑞

Mechanical Buzzer (DC)

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CANOPUS

Inductor for Digital AMP

Features： Core material:Ferrite Core and winding loss: www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison.html Environmental:RoHS compliant, halogen free Weight:36.96g Moisture Sensitivity:Level (MSL) 1 (unlimited floor life at

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CODACA

科達(dá)嘉電子