NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em

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MITSUBISHI

三菱電機(jī)

RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

DESCRIPTION\n2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.FEATURES\n● High power gain: Gpe ≥ 10.7dB\n?? @VCC = 13.5V, PO = 3.5W, f = 175MHz\n●?TO-39 metal seeled package for high reliability.\n●?Emitte ● High power gain: Gpe ≥ 10.7dB\n?? @VCC = 13.5V, PO = 3.5W, f = 175MHz\n●?TO-39 metal seeled package for high reliability.\n●?Emitter electrode is connected electrically to the caseAPPLICATION\n?? 1 to 3 watt power amplifiers in VHF band mobile radio applications.;

MITSUBISHI

三菱電機(jī)

渦輪流量計

Clark Solutions

渦輪流量計

Clark Solutions