| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BUZ45 | 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET IThis is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This 文件:12.11 Kbytes 頁數(shù):1 Pages | INTERSIL | INTERSIL | |
BUZ45 | SOA is Power Dissipation Limited DESCRIPTION ? Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ? SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching t 文件:47.51 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
BUZ45 | N-Channel Enhancement-Mode Power Field-Effect Transistors GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. 文件:98.54 Kbytes 頁數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | |
8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This 文件:12.13 Kbytes 頁數(shù):1 Pages | INTERSIL | INTERSIL | ||
SOA is Power Dissipation Limited DESCRIPTION ? Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ? SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching t 文件:47.52 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
SOA is Power Dissipation Limited DESCRIPTION ? Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ? SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching t 文件:47.51 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
10A, 500V, 0.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This 文件:42.44 Kbytes 頁數(shù):5 Pages | INTERSIL | INTERSIL | ||
BUZ45 | 9.6A/ 500V/ 0.600 Ohm/ N-Channel Power MOSFET | Renesas 瑞薩 | Renesas | |
BUZ45 | Trans MOSFET N-CH 500V 9.6A | NJS | NJS | |
10A/ 500V/ 0.500 Ohm/ N-Channel Power MOSFET | Renesas 瑞薩 | Renesas |
技術(shù)參數(shù)
- Maximum Drain Source Voltage:
500V
- Maximum Continuous Drain Current:
9.6A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
17+ |
TO-220 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
24+ |
TO-3 |
10000 |
詢價 | ||||
西門子 |
05+ |
TO-220 |
2000 |
全新原裝 絕對有貨 |
詢價 | ||
SIEMENS |
24+ |
TO-3 |
1250 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Siemens/西門子 |
專業(yè)鐵帽 |
TO-3 |
1250 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
2000 |
20 |
詢價 | |||||
原裝 |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
NEXPERIA/安世 |
23+ |
SOT-23 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
SIEMENS |
00+ |
TO |
2 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INTERSIL |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 |
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