isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.1A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

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ISC

無(wú)錫固電

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

? N channel ? Enhancement mode ? Avalanche-rated

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SIEMENS

西門子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飛凌

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM357DX contains diodes with performance characteristics designed specifically for applications from 16kHz to 70kHz. The BYM357DX series is

文件：51.59 Kbytes 頁(yè)數(shù)：7 Pages

PHI

PHI

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM357X contains diodes with performance characteristics designed specifically for applications from 16kHz to 70kHz The BYM357X series is supplied

文件：50.78 Kbytes 頁(yè)數(shù)：7 Pages

PHI

PHI

Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS Die Size 22 x 17 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 14 x 9 MILS Top Side Metalization Al-Si - 30,000? Back Side Metalization Au - 12,000?

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CENTRAL