isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：347.82 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ? Power Transistor ? N channel ? Enhancement mode ? Avalanche-rated

文件：211.63 Kbytes 頁數(shù)：9 Pages

SIEMENS

西門子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飛凌

MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

文件：696.77 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

MOLOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

FEATURES ? 16 or 24 pin ceramic dip ? Minimum of external components required ? Easily adjusts for yoke errors ? Accuracy better than 0.5 Max(C312) ? Bandwidth compatible with 10MHz systems ? Both geometry and focus available

文件：646.58 Kbytes 頁數(shù)：4 Pages

INTRONICS

3.5 Embedded SBC with Intel? Pentium? Processor N4200 & Celeron? Processor 3.5 Embedded SBC with Intel? Pentium? Processor N4200 & Celeron? Processor

文件：276.53 Kbytes 頁數(shù)：1 Pages

AXIOMTEK

艾訊科技