30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

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FAIRCHILD

仙童半導(dǎo)體

30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

文件：45.53 Kbytes 頁數(shù)：6 Pages

INTERSIL

High input impedance

DESCRIPTION ? Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ? SOA is Power Dissipation Limited ? High input impedance APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bip

文件：66.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION · Motor control and drive · Battery management · Genaral Power Switching

文件：334.8 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET??MOSFET

N - CHANNEL50V - 0.03Q - 33A TO-220 STripFET? MOSFET ■ TYPICAL Ros(on) = 0.03Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID ANDRELAY DRIVERS ■ REGULATORS ■ DC-DC &

文件：131.34 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)

SIPMOS? Power Transistor ? N channel ? Enhancement mode ? Avalanche-rated

文件：120.49 Kbytes 頁數(shù)：9 Pages

SIEMENS

西門子

N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET

■ TYPICAL RDS(on) = 0.03 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC

文件：80.39 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-Channel Power MOSFET 50V, 30A, 40 m廓

文件：323.03 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

SIPMOS? Power Transistor

SIPMOS Power Transistor Product Summary Drain source voltage VDS 55V Drain-Source on-state resistance RDS(on) 0.01? Continuous drain current ID 80A Features ? N channel ? Enhancement mode ? Avalanche rated ? dv/dtrated ? 175 ?C operating temperature

文件：139.69 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌