| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BUL118D | isc Silicon NPN Power Transistor DESCRIPTION ? Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ? Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.5A ? Very High Switching Speed APPLICATIONS ? Designed for use in lighting applications and low cost switchmode power supplies. 文件：196.43 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
BUL118D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desig 文件：243.25 Kbytes 頁數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
BUL118D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ST 意法半導(dǎo)體 | ST | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi 文件：71.25 Kbytes 頁數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The devices are 文件：227.18 Kbytes 頁數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi 文件：74.17 Kbytes 頁數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào)：
BUL118D
- 功能描述：
BJT
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
1520+ |
TO-220 |
60 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ST |
24+ |
TO-220 |
8000 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價(jià) | ||
ST |
25+ |
TO-220 |
16900 |
原裝，請(qǐng)咨詢 |
詢價(jià) | ||
ST |
22+ |
TO-220 |
16900 |
電子元器件采購(gòu)降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
SST |
原廠封裝 |
9800 |
原裝進(jìn)口公司現(xiàn)貨假一賠百 |
詢價(jià) | |||
ST |
26+ |
TO-220 |
60000 |
只有原裝 可配單 |
詢價(jià) | ||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST/意法 |
23+ |
14+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ST |
2026+ |
TO-220 |
85 |
原裝正品,假一罰十! |
詢價(jià) | ||
恩XP |
24+ |
SOT523 |
96000 |
公司現(xiàn)貨庫存,支持實(shí)單 |
詢價(jià) |
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