isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

文件：297.05 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

文件：297.05 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistor Isolated version of BUK455-100A/B

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The deviceis intended foruse inSwitched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

文件：76.72 Kbytes 頁數(shù)：7 Pages

PHI

PHI

D2PAK

NEXPERIA

安世

上傳：萬三科技(深圳)有限公司

D2PAK

NEXPERIA/安世

上傳：深圳市盈慧通電子有限公司