Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

文件：18.4 Kbytes 頁數(shù)：4 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

文件：21.63 Kbytes 頁數(shù)：4 Pages

PHI

PHI

Silicon Diffused Power Transistor

恩XP

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free)

? Low forward voltage drop ? High switching speed ? Low tail current ? Latch-up free ? Avalanche rated

文件：381.06 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

MAIN RATINGS

Description : FREDFET with fast-recovery reverse diode, N-channel, enhancement mode

文件：182.49 Kbytes 頁數(shù)：6 Pages

SIEMENS

西門子

SOA is Power Dissipation Limited

DESCRIPTION ? Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ? SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistor

文件：47.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電