High Current PN Half Bridge NovalithIC?

文件：1.82845 Mbytes 頁數(shù)：27 Pages

INFINEON

英飛凌

High Current PN Half Bridge NovalithIC?

文件：1.82845 Mbytes 頁數(shù)：27 Pages

INFINEON

英飛凌

智能電機控制IC

The BTN8960TA is a integrated high current half bridge for motor drive applications. It is part of the NovalithIC? family containing one p- channel highside MOSFET and one n- channel lowside MOSFET with an integrated driver IC in one package. Due to the p- channel highside switch the need for a char ·Path resistance of max. 30.3 mΩ @ 150 °C (typ. 14.2 mΩ @ 25 °C) ·High Side: max. 13.4 mΩ @ 150 °C (typ. 6.7 mΩ @ 25 °C)\n ·Low Side: max. 16.9 mΩ @ 150 °C (typ. 7.5 mΩ @ 25 °C)\n \n ·Enhanced switching speed for reduced switching losses\n ·Capable for high PWM frequency combined with a;

Infineon

英飛凌

Surface Planer

文件：640.89 Kbytes 頁數(shù)：2 Pages

DISCO

迪斯科公司

Dual N & P-Channel PowerTrench MOSFET

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devic

文件：175.32 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N & P-Channel PowerTrench? MOSFET

文件：157.19 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體