絲?。?a target="_blank" title="Marking" href="/0909nd/marking.html">0909ND；Package：PG-WISON-8；Dual N-channel OptiMOS??MOSFET

Features ·DualN-channelOptiMOS?MOSFET ·Enhancementmode ·Logiclevel(4.5Vrated) ·Avalancherated ·100Lead-free;RoHScompliant ·Halogen-freeaccordingtoIEC61249-2-21

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INFINEON

英飛凌

N 溝道功率 MOSFET

OptiMOS? 技術(shù)與 PQFN 3x3 封裝相結(jié)合，為空間要求極為嚴(yán)苛的直流-直流應(yīng)用提供優(yōu)化解決方案。BSZ0909ND 特別適用于無線充電或驅(qū)動(dòng)（例如多軸直升機(jī)）架構(gòu)，幫助設(shè)計(jì)師在不降低效率的前提下簡(jiǎn)化布局并節(jié)省大量空間。 ? 極低 Q g\n? 在 3.0x3.0mm2 小封裝類型中實(shí)現(xiàn)對(duì)稱半橋設(shè)計(jì)\n? 散熱焊盤\n? 邏輯電平（額定 4.5V ）\n? 符合 RoHS 6/6（完全無鉛）\n\n優(yōu)勢(shì):\n? 低開關(guān)損耗\n? 高開關(guān)頻率運(yùn)行\(zhòng)n? 低寄生效應(yīng)\n? 低工作溫度\n? 低柵極驅(qū)動(dòng)損耗\n? RoHS 6/6 無鉛產(chǎn)品?;

Infineon

英飛凌

n-Channel Power MOSFET

1.Description OptiMOS ? 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS? 30V the best choice forthe demanding requirements

文件：1.23512 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

Leaded Power Chokes DMI

文件：197.58 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES ? High output power P1dB=38dBm(TYP.) @f=2.3GHz ? High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm ? High power added efficiency hadd=45(TYP.

文件：22.93 Kbytes 頁數(shù)：3 Pages

MITSUBISHI

三菱電機(jī)