絲?。?a target="_blank" title="Marking" href="/o2/marking.html">O2；Package：SOT-23；SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

文件：30.32 Kbytes 頁數(shù)：1 Pages

ZETEX

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. FEATURES ? Direct interface to C-

文件：74.39 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Product availability: BST82 in SOT23. 2. Features n TrenchMOS? technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicati

文件：372.21 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

N-Channel Enhancement Mode MOSFET

Features ? Low on-resistance ? High-speed switching ? Drive circuits can be simple ? Parallel use is easy

文件：6.27282 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes

美臺半導體

N-channel enhancement mode field-effect transistor

Description\nN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology.\nProduct availability:\n?? BST82 in SOT23.\n?? ■ TrenchMOS? technology\n■ Very fast switching\n■ Logic level compatible\n■ Subminiature surface mount package.Applications\n■ Relay driver\n■ High speed line driver\n■ Logic level translator.;

恩XP