N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES: ? Very low RDS(on) ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No second breakdown

文件：74.24 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES: ? Very low RDS(on) ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No second breakdown

文件：63.63 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.18006 Mbytes 頁數(shù)：15 Pages

ROHM

羅姆

Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.31201 Mbytes 頁數(shù)：22 Pages

ROHM

羅姆

Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.18132 Mbytes 頁數(shù)：15 Pages

ROHM

羅姆

N-channel vertical D-MOS transistor

DESCRIPTION\nN-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.FEATURES:\n? Very low RDS(on)\n? Direct interface to C-MOS, TTL, etc.\n? High-speed switching\n? No second breakdown

恩XP

HSDIP20, 1200V, 70/38A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module

The BST70M2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature eve ? HSDIP20 package with the 4th Generation SiC-MOSFET\n? VDSS = 1200V\n? Low RDS(on)\n? High-speed switching possible\n? Low switching losses\n? Tvjmax = 175°C\n? Compact design\n? With high thermal conductivity isolation\n? Integrated NTC temperature sensor\n? 4.2kV AC 1s insulation;

ROHM

羅姆

HSDIP20, 1200V, 70A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module

The BST70T2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature eve ? HSDIP20 package with the 4th Generation SiC-MOSFET\n? VDSS = 1200V\n? Low RDS(on)\n? High-speed switching possible\n? Low switching losses\n? Tvjmax = 175°C\n? Compact design\n? With high thermal conductivity isolation\n? Integrated NTC temperature sensor\n? 4.2kV AC 1s insulation;

ROHM

羅姆