SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ? Small-Signal Transistor ? P channel ? Enhancement mode ? Logic Level ? VGS(th) = -0.8...-2.0 V

文件：75.16 Kbytes 頁(yè)數(shù)：7 Pages

SIEMENS

西門子

絲?。?a target="_blank" title="Marking" href="/kb/marking.html">KB；Package：SOT89；240 V, P-channel vertical D-MOS transistor

1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits ? Direct interface to Complementary (C-MOS) transitor and Transisto

文件：372.5 Kbytes 頁(yè)數(shù)：16 Pages

NEXPERIA

安世

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT89 package. FEATURES ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No secondary breakdown. APPLICATIONS ? Line current interrupter in telephone sets ? Relay, high-speed and line transformer

文件：64.26 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

SIPMOS Small-Signal-Transistor

文件：79.38 Kbytes 頁(yè)數(shù)：8 Pages

INFINEON

英飛凌

SIPMOS Small-Signal-Transistor

文件：301.17 Kbytes 頁(yè)數(shù)：8 Pages

INFINEON

英飛凌

SIPMOS Small-Signal-Transistor

文件：301.17 Kbytes 頁(yè)數(shù)：8 Pages

INFINEON

英飛凌

P溝道增強(qiáng)模式場(chǎng)效應(yīng)晶體管 (FET)，-250 V，SOT-89

英飛凌高度創(chuàng)新型 OptiMOS? 系列包括 P 通道功率 MOSFET。這些產(chǎn)品始終滿足電力系統(tǒng)設(shè)計(jì)關(guān)鍵規(guī)范中的至高質(zhì)量和性能要求，例如導(dǎo)通電阻特性和品質(zhì)因數(shù)特性。 ? 增強(qiáng)模式\n? 雪崩評(píng)級(jí)\n? 無(wú)鉛鍍層；符合 RoHS\n? 小信號(hào)封裝，經(jīng) AEC Q101 認(rèn)證\n\n優(yōu)勢(shì):;

Infineon

英飛凌

P-Channel SIPMOS Small-Signal Transistor

Infineon

英飛凌