| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
50V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control 文件：707.2 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲印：38D；Package：SOT363；50V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control 文件：707.2 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲印：38D；Package：SOT363；50V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control 文件：707.2 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
Low On-Resistance Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switchin 文件：367.75 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
Low On-Resistance Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switchin 文件：367.75 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
Low On-Resistance Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switchin 文件：367.75 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：105.91 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：219.76 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：105.91 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
Dual N-Channel 60 V (D-S) MOSFET 文件：945.68 Kbytes 頁數(shù)：6 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI |
技術(shù)參數(shù)
- Automotive Compliant PPAP：
BSS138DWQ
- Polarity：
N+N
- ESD Diodes：
No
- VDS：
50 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.2 A
- PD @ TA = +25°C：
0.2 W
- RDS(ON) Max @ VGS (10V)：
3500 mΩ
- RDS(ON) Max @ VGS (4.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
1.5 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT363
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
DIODES/美臺 |
2025+ |
SOT-363 |
5000 |
原裝進(jìn)口價格優(yōu) 請找坤融電子! |
詢價 | ||
DIODES |
24+ |
SOT-363SOT-323-6 |
6300 |
新進(jìn)庫存/原裝 |
詢價 | ||
DIODES/美臺 |
24+ |
SOT363 |
98000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
VBsemi(臺灣微碧) |
2447 |
SC70-6 |
105000 |
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
DIODES/美臺 |
23+ |
SOT363 |
12000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
MSV/萌盛微 |
23+ |
SOT-363 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
DIODES/美臺 |
22+ |
SOT363 |
30000 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價 | ||
DIODES |
2015+ |
SOT363 |
995300 |
原裝現(xiàn)貨價格優(yōu)勢-含16%增值稅 |
詢價 | ||
YANGJIE |
20 |
詢價 | |||||
24+ |
N/A |
65000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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