SOT-23 Plastic-Encapsulate MOSFET

N -Channel MOSFET Features ● High density cell design for extremely low RDS(on) ● Rugged and Relaible Applications ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

文件：2.40498 Mbytes 頁數(shù)：5 Pages

HDSEMI

海德半導(dǎo)體

Direct Logic-Level Interface: TTL/CMOS

FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State Relays

文件：586.2 Kbytes 頁數(shù)：4 Pages

BWTECH

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-23；N-Channel MOSFET

Features ● VDS(V)=50V ● ID=300mA(VGS=10V) ● RDS(ON)

文件：1.48102 Mbytes 頁數(shù)：4 Pages

UMW

友臺(tái)半導(dǎo)體

絲印：J2x；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.96228 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) ESD protected 2KV HBM zApplications Interfacing, switching (50V, 100mA)

文件：2.85611 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

N-Channel MOSFET

Features VDS (V) = 50V ID = 200 mA (VGS = 10V) RDS(ON)

文件：1.10935 Mbytes 頁數(shù)：4 Pages

EVVOSEMI

翊歐

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) ? Qualified to AEC-Q101 Standards for High Reliability

文件：139.53 Kbytes 頁數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 頁數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These prod

文件：126.57 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 頁數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體