P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

文件：285.09 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. FEATURES ? Low threshold voltage ? Direct interface to C-MOS, TTL, etc. ? High speed switching ? No secondary breakdown. APPLICATIONS ? Intended for use as a Line current interruptor in telepho

文件：76.96 Kbytes 頁數(shù)：9 Pages

PHI

PHI

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ? Small-Signal Transistor ? P channel ? Enhancement mode ? Logic Level ? VGS(th) = -0.8...-2.0 V

文件：80.51 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

SIPMOS? Small-Signal Transistor

SIPMOS ? Small-Signal Transistor? P channel\n? Enhancement mode\n? Logic Level\n? VGS(th) = -0.8...-2.0 V

Infineon

英飛凌

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThese P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. ■ BSS84: -0.13A, -50V. RDS(ON) = 10W @ VGS = -5V.\n?? BSS110: -0.17A, -50V. RDS(ON) = 10W @ VGS = -10V\n■ Voltage controlled p-channel small signal switch.\n■ High density cell design for low RDS(ON) .\n■ High saturation current.;

ONSEMI

安森美半導(dǎo)體