絲?。?a target="_blank" title="Marking" href="/u92/marking.html">U92；Package：SOT-23；NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: BSR18A. FEATURES ? Low current (max. 100 mA) ? Low voltage (max. 40 V). APPLICATIONS ? Switching and linear amplification.

文件：62 Kbytes 頁數(shù)：8 Pages

PHI

PHI

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS SOT-23 Formed SMD Package N–P–N silicon transistor

文件：145.32 Kbytes 頁數(shù)：4 Pages

CDIL

Surface mount Si-Epitaxial PlanarTransistors

Switching Transistors ? Power dissipation 250 mW ? Plastic case SOT-23 ? Weight approx. 0.01 g ? Plastic material has UL classification 94V-0 ? Standard packaging taped and reeled

文件：181.78 Kbytes 頁數(shù)：2 Pages

DIOTEC

德歐泰克

NPN Switching Transistors

Features ● High current (max. 100 mA). ● Low voltage (max. 40 V).

文件：45.38 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

文件：83.64 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

NPN General Purpose Amplifier

文件：365.11 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

NPN General Purpose Amplifier

該器件設計用于通用放大器和開關。 開關的有效動態(tài)電流范圍已擴展至100 mA，放大器的頻率已擴展至100 MHz。 采用工藝23設計。

ONSEMI

安森美半導體

SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Surface mount Si-Epitaxial PlanarTransistors

DEC

Package：TO-236-3，SC-59，SOT-23-3；包裝：剪切帶（CT）帶盒（TB） 類別：分立半導體產品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 40V 0.2A SOT23-3

ONSEMI

安森美半導體