P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a surface-mounted device in line current interruptor in telephone sets and for application in relay, high speed and line transformer drivers. FEATURES ? Low threshold voltage VGS(th) ? Di

文件：52.04 Kbytes 頁數(shù)：8 Pages

PHI

PHI

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ? Small-Signal Transistor ? P channel ? Enhancement mode ? Logic Level ? VGS(th) = -0.8...-2.0 V

文件：97.22 Kbytes 頁數(shù)：8 Pages

SIEMENS

西門子

SIPMOS Small-Signal-Transistor

Feature ? P-Channel ? Enhancement mode ? Logic Level ? dv/dt rated ? Pb-free lead plating; RoHS compliant

文件：78.13 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

SIPMOS Small-Signal-Transistor

文件：766.12 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

SIPMOS Small-Signal-Transistor

文件：766.12 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

P-channel enhancement mode vertical D-MOS transistor

恩XP

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

Infineon

英飛凌

20V-250V P-Channel Power MOSFET

英飛凌高度創(chuàng)新型 OptiMOS? 系列包括 P 通道功率 MOSFET。這些產(chǎn)品始終滿足電力系統(tǒng)設(shè)計(jì)關(guān)鍵規(guī)范中的至高質(zhì)量和性能要求，例如導(dǎo)通電阻特性和品質(zhì)因數(shù)特性。 ? 增強(qiáng)模式\n? 雪崩評級\n? 無鉛鍍層；符合 RoHS\n? 小信號封裝，經(jīng) AEC Q101 認(rèn)證\n\n優(yōu)勢:;

Infineon

英飛凌