| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/n20/marking.html">N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Sw 文件：122.19 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導體 | DIODES | ||
絲印：4S；Package：TO-236AB；60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ElectroStati 文件：739.42 Kbytes 頁數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. FEATURES ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No secondary breakdown. APPLICATIONS ? Thin and thick film circuits ? General purpose fast switching applications 文件：73.71 Kbytes 頁數(shù)：8 Pages | PHI PHI | PHI | ||
N-channel enhancement mode field-effect transistor 文件：296.13 Kbytes 頁數(shù)：13 Pages | PHI PHI | PHI | ||
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET 文件：183.98 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導體 | DIODES | ||
絲印：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET 文件：183.98 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導體 | DIODES | ||
絲印：-4S；Package：SOT-23；60 V, N-channel Trench MOSFET 文件：280.82 Kbytes 頁數(shù)：16 Pages | PHI PHI | PHI | ||
絲?。?a target="_blank" title="Marking" href="/n20/marking.html">N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET 文件：183.98 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導體 | DIODES | ||
BSN20 | N-CHANNEL ENHANCEMENT MODE MOSFET This new generation 50V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , other power management functions. | Diodes 美臺半導體 | Diodes | |
60 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ? Logic-level compatible\n? Very fast switching\n? Trench MOSFET technology\n? ElectroStatic Discharge (ESD) protection: 2 kV HBM; | Nexperia 安世 | Nexperia |
技術參數(shù)
- Automotive Compliant PPAP：
On Request*
- Polarity：
N
- ESD Diodes：
No
- VDS：
50 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.5 A
- PD @ TA = +25°C：
0.6 W
- RDS(ON) Max @ VGS (10V)：
1800 mΩ
- RDS(ON) Max @ VGS (4.5V)：
2000 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
1.5 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
800 nC
- Packages：
SOT23
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
恩XP |
25+ |
SOT23 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
恩XP |
16+ |
SOT23 |
13450 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
恩XP |
1528+ |
SOT-23 |
3500 |
原裝正品現(xiàn)貨供應56 |
詢價 | ||
恩XP |
24+ |
SOT-23 |
264000 |
一級代理/全新現(xiàn)貨/長期供應! |
詢價 | ||
恩XP |
2019+ |
SOT-23 |
78550 |
原廠渠道 可含稅出貨 |
詢價 | ||
恩XP |
1143+ |
SOT-23 |
293 |
原裝正品 可含稅交易 |
詢價 | ||
恩XP |
2023+ |
SOT23 |
15000 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價 | ||
PHI |
2021+ |
SOT-23 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
恩XP |
25+ |
SOT23-3 |
25000 |
全新原裝現(xiàn)貨,假一賠十 |
詢價 | ||
NEXPERIA/安世 |
23+ |
SOT-23 |
100586 |
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費! |
詢價 |
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