New OptiMOS??40V and 60V

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絲印：028N06SC；Package：PG-WSON-8；OptiMOSTM Power-Transistor, 60 V

Features ? Dual-side cooled package with lowest Junction-top thermal resistance ? 175°C rated ? Optimized for high performance SMPS, e.g. sync. rec. ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-

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OptiMOS??Power-Transistor

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絲?。?a target="_blank" title="Marking" href="/028n06ns/marking.html">028N06NS；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

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N 溝道功率 MOSFET

OptiMOS ? 5 60V 針對交換模式電源 (SMPS)中的同步整流進(jìn)行了優(yōu)化，例如服務(wù)器和臺式機(jī)以及平板電腦充電器中的電源。此外，這些器件是電機(jī)控制、太陽能微逆變器和快速開關(guān) 直流-直流轉(zhuǎn)換器等廣泛工業(yè)應(yīng)用的絕佳選擇。 ? 針對同步整流進(jìn)行優(yōu)化\n? R DS(on) 比其他器件低 40%\n? 與同類器件相比，品質(zhì)因數(shù)提高了 40%\n? 符合 RoHS - 無鹵素\n? MSL1 評級\n\n優(yōu)勢:\n? 高系統(tǒng)效率\n? 減少并聯(lián)\n? 增加功率密度\n? 降低系統(tǒng)成本\n? 非常低的電壓過沖;

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OptiMOS ? 5 60 V 功率 MOSFET 采用 SuperSO8 DSC 封裝，具有雙面冷卻功能，可增強(qiáng)熱性能

\n優(yōu)勢:\nImproved heat dissipation\nSuperior thermal resistance\nDrop-in replacement in designs using SuperSO8 package\nLow conduction and switching losses;

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OptiMOS ? 5 功率 MOSFET 具有增強(qiáng)的溫度額定值，可提高穩(wěn)健性

OptiMOS? 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power ? Low RDS(on) \n? Optimized for synchronous rectification\n? Enhanced 175°C capability in SuperSO8\n\n優(yōu)勢:\n? Longer life time\n? Highest efficiency and power density\n? Highest system reliability\n? Thermal robustness\n?;

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