絲?。?a target="_blank" title="Marking" href="/014n04ls/marking.html">014N04LS；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

Features ?Optimizedforsynchronousrectification ?Verylowon-stateresistanceRDS(on) ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?Highersolderjoin

文件：1.60471 Mbytes 頁數：13 Pages

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New OptiMOS??40V and 60V

文件：1.02174 Mbytes 頁數：2 Pages

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OptiMOSTM Power-MOSFET, 40 V

Features ?Optimizedforsynchronousrectification ?Verylowon-stateresistanceRDS(on) ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?Highersolderjoin

文件：1.60471 Mbytes 頁數：13 Pages

INFINEON

英飛凌

New OptiMOS??40V and 60V

文件：1.02174 Mbytes 頁數：2 Pages

INFINEON

英飛凌

OptiMOSTM Power-MOSFET, 40 V

文件：1.60596 Mbytes 頁數：13 Pages

INFINEON

英飛凌

OptiMOSTM Power-MOSFET, 40 V

文件：1.60596 Mbytes 頁數：13 Pages

INFINEON

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絲印：014N04LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

文件：1.61643 Mbytes 頁數：13 Pages

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N 溝道功率 MOSFET

40V and 60V product families, feature not only the industry’s lowest R?DS(on)?but also a perfect switching behavior for fast switching applications. 15% lower R?DS(on)?and 31% lower figure of merit (R?DS(on)?x Q?g) compared to alternative devices has been realized by advanced thin wafer tech ? Optimized for synchronous rectification\n? 15% lower RDS(on)than alternative devices\n? 31% improvement of FOM over similar devices\n? RoHS compliant - halogen free\n? MSL1 rated\n\n優(yōu)勢:\n? Highest system efficiency\n? Less paralleling required\n? Increased power density\n? System cost redu;

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N 溝道功率 MOSFET

New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer ? Optimized for synchronous rectification\n? 15% lower R DS(on) than alternative devices\n? 31% improvement of FOM over similar devices\n? Integrated Schottky-like diode\n? RoHS compliant - halogen free\n? MSL1 rated\n\n優(yōu)勢:\n? Highest system efficiency\n? Less paralleling required\n? Increas;

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OptiMOS ? 5 功率 MOSFET 具有增強的溫度額定值，可提高穩(wěn)健性

OptiMOS? 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power ? Low RDS(on) \n? Optimized for synchronous rectification\n? Enhanced 175°C capability in SuperSO8\n\n優(yōu)勢:\n? Longer life time\n? Highest efficiency and power density\n? Highest system reliability\n? Thermal robustness\n?;

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