絲?。?strong>BS7；Package：SMA；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits ? Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W ? Reverse standoff

文件：210.65 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：BS77；Package：SOT-23；QUAD BIDIRECTIONAL TRANSIL SUPPRESSOR FOR ESD PROTECTION

DESCRIPTION The ESDA6V1-4BC6 is a monolithic array designed to protect up to 4 lines in a bidirectional way against ESD transients. The device is ideal for situations where board space is at a premium. FEATURES ■ 4 Bidirectional Transil functions ■ ESD Protection for data, Signal and VCC Bus

文件：50.21 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/bs77/marking.html">BS77；Package：SOT-23；QUAD BIDIRECTIONAL TRANSIL SUPPRESSOR FOR ESD PROTECTION

文件：60.63 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導體

SMD NTC thermistors for automotive applications

Applications Temperature measurement and compensation in various automotive circuits such as ? charging and temperature control of battery packs and battery management systems (BMS) ? electronic control units (ECUs), e.g. motor management, HVAC, electronic power steering (EPS), gearbox control

文件：729.62 Kbytes 頁數(shù)：13 Pages

EPCOS

愛普科斯

SMD NTC thermistors for automotive applications

Applications Temperature measurement and compensation in various automotive circuits such as ? charging and temperature control of battery packs and battery management systems (BMS) ? electronic control units (ECUs), e.g. motor management, HVAC, electronic power steering (EPS), gearbox control

文件：729.62 Kbytes 頁數(shù)：13 Pages

EPCOS

愛普科斯

SUB-MINIATURE SILICON HIGH VOLTAGE FAST RECOVERY RECTIFIER

RECOVERY TIME: Io = 2mA to 4mA to 1 mA – 150 n SEC.

文件：55.52 Kbytes 頁數(shù)：1 Pages

EDAL

SUB-MINIATURE SILICON HIGH VOLTAGE FAST RECOVERY RECTIFIER

RECOVERY TIME: Io = 2mA to 4mA to 1 mA – 150 n SEC.

文件：55.52 Kbytes 頁數(shù)：1 Pages

EDAL

SUB-MINIATURE SILICON HIGH VOLTAGE FAST RECOVERY RECTIFIER

RECOVERY TIME: Io = 2mA to 4mA to 1 mA – 150 n SEC.

文件：55.52 Kbytes 頁數(shù)：1 Pages

EDAL

SUB-MINIATURE SILICON HIGH VOLTAGE FAST RECOVERY RECTIFIER

RECOVERY TIME: Io = 2mA to 4mA to 1 mA – 150 n SEC.

文件：55.52 Kbytes 頁數(shù)：1 Pages

EDAL

SUB-MINIATURE SILICON HIGH VOLTAGE FAST RECOVERY RECTIFIER

RECOVERY TIME: Io = 2mA to 4mA to 1 mA – 150 n SEC.

文件：55.52 Kbytes 頁數(shù)：1 Pages

EDAL