P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. FEATURES ? Direct interface to C-MOS ? High-speed switching ? No secondary breakdown.

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PHI

PHI

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features ? High Breakdown Voltage ? High Input Impedance ? Fast Switching Speed ? Low Drain-Source On-Resistance ? Specially Suited for Telephone Subsets

文件：62.55 Kbytes 頁數(shù)：2 Pages

DIODES

美臺半導(dǎo)體

DMOS Transistors (P-Channel)

FEATURES ? High breakdown voltage ? High input impedance ? Low gate threshold voltage ? Low drain-source ON resistance ? High-speed switching ? No minority carrier storage time ? CMOS logic compatible input ? No thermal runaway ? No secondary breakdown ? Specially suited for telephone su

文件：238.81 Kbytes 頁數(shù)：5 Pages

GE

DMOS Transistors (P-Channel)

FEATURES\nHigh breakdown voltage\nHigh input impedance\nLow gate threshold voltage\nLow drain-source ON resistance\nHigh-speed switching\nNo minority carrier storage time\nCMOS logic compatible input\nNo thermal runaway\nNo secondary breakdown\nSpecially suited for telephone subsets High breakdown voltage\nHigh input impedance\nLow gate threshold voltage\nLow drain-source ON resistance\nHigh-speed switching\nNo minority carrier storage time\nCMOS logic compatible input\nNo thermal runaway\nNo secondary breakdown\nSpecially suited for telephone subsets;

General Semiconductor