N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

文件：75.64 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

文件：52.79 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 頁數(shù)：16 Pages

ONSEMI

安森美半導(dǎo)體

N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES ? Very low RDS(on). ? Direct interface to C-MOS, TTL, etc. ? High-speed switching. ? No secondary breakdow

文件：49.71 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件：51.23 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件：64.519 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features ? High Input Impedance ? Fast Switching Speed ? CMOS Logic Compatible Input ? No Thermal Runaway or Secondary BreakdFeatures

文件：66.37 Kbytes 頁數(shù)：2 Pages

DIODES

美臺半導(dǎo)體

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

文件：77.57 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉

DMOS Transistors (N-Channel)

FEATURES ? High input impedance ? High-speed switching ? No minority carrier storage time ? CMOS logic compatible input ? No thermal runaway ? No secondary breakdown

文件：233.09 Kbytes 頁數(shù)：5 Pages

GE

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

? N channel ? Enhancement mode ? Logic Level ? VGS(th) = 0.8...2.0V

文件：77.94 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子